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Supertex

VN1706 Datasheet Preview

VN1706 Datasheet

N-Channel Enhancement-Mode Vertical DMOS Power FETs

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4
"-11 !iupertex inc.
VN1706
VN1710
N-Channel Enhancement-Mode
Vertical DMOS Power FETs
Ordering Information
BVoss I
BVoas
170V
170V
ROS(ON)
(max)
Srl
100
IO(ON)
(min)
1.0A
1.0A
TO-39
Order Number I Package
TO-92
TO-220
VN170SB
VN170SL
VN170SD
VN1710B
VN1710L
VN1710D
Features
o Freedom from secondary breakdown
o Low power drive requirement
o Ease of paralleling
o Low CISS and fast switching speeds
o Excellent thermal stability
o Integral Source-Drain diode
o High input impedance and high gain
o Complementary N- and P-Channel devices
Applications
o Motor control
o Converters
o Amplifiers
o Switches
o Power supply circuits
o Drivers (Relays, Hammers, Solenoids, Lamps,
Memories, Displays, Bipolar Transistors, etc.)
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors util-
ize a vertical DMOS structure and Supertex's well-proven silicon-
gate manufacturing process. This combination produces devices
with the power handling capabilities of bipolar transistors and with
the high input impedance and negative temperature coefficient
inherent in MOS devices. Characteristic of all MOS structures,
these devices are free from thermal runaway and thermally-
induced secondary breakdown.
Supertex Vertical DMOS Power FETs are ideally suited to a wide
range of switching and amplifying applications where high break-
down voltage, high input impedance, low input capacitance, and
fast switching speeds are desired.
..
!
Package Options
(Note 1)
i
TO·39
TO·92
Absolute Maximum Ratings
Drain-to-Source Voltage
Drain-to-Gate Voltage
Gate-to-Source Voltage
Operating and Storage Temperature
Soldering Temperature·
*Oistance of 1.6 mm from case for 10 seconds.
±40V
8-99
TO·220
Note 1: See Package Outline section for discrete pinouts.




Supertex

VN1706 Datasheet Preview

VN1706 Datasheet

N-Channel Enhancement-Mode Vertical DMOS Power FETs

No Preview Available !

Thermal Characteristics
Package
10 (continuous)'
TO-39
0.S3A
TO-92
0.IS8A
TO-220
0.7A
*ID (contInuous) is limited by max rated Tj'
10 (pulsed)
3.0A
O.SA
3A
Power Dissipation
S.2SW
OAW
20W
Elil
°CIW
170
312.5
80
El le
°CIW
20
21.3
S.2S
VN1706/vN1710
Electrical Characteristics (@ 25°C unless otherwise specified)
(Notes 1 and 2)
Symbol
BVDSS
VGS(th)
IGSS
IDSS
Parameter
Drain-to-Source
Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Min Typ Max Unit
170 V
.8 2 V
100 nA
- 10
500
.,.A
tD(ON)
ON-State Drain Current
1.0
A
RDS(ON)
Static Drain-to-Source
ON-State Resistance
ALL
VN1710
10
10 0.
VN170S
S
GFS
Forward Transconductance
300
mU
CISS
Input Capacitance
125
COSS
Common Source Output Capacitance
50 pF
CRSS
Reverse Transler Capacitance
20
t(ON)
t(OFF)
Turn-ON Time
Turn-OFF Time
8
ns
17
VSD
Diode Forward Voltage Drop
VN1710
-1.2
V
VN170S
-1.2
Nole 1: All D.C. parameters 100% lested a125°C unless otherwise stated. (Pulse lest: 300ms pulse, 2% duty cycle.)
Note 2: All A.C. parameters sample lesled.
Conditions
ID = 100.,.A, VGS = 0
VGS = VDS, ID = lmA
VGS = ISV, VDS = 0
VGS = OV, VDS = 120V
VGS = OV, VDS = 120V
TA = 125°C
VGS = -10V, VDS '" 2 VDS (ON)
VGS = 2.SV, ID = O.IA
VGS = 10V, ID = O.SA
ID = O.SA VGS = 10V
VDS '" 2 VDS(ON), ID = O.SA
VGS = 0, VDS = 2SV
1= lMHz
VDD = SOV, ID = O.IA
RS = son
ISD = -0.19, VGS = 0
ISD = -1.4A, VGS = 0
Switching Waveforms and Test Circuit
INPUT
OUTPUT
r-~L-;--l
I GENERATOR
I
I-~:---o SCOPE
I
\~I~+-~~
D.U.T.
lI I
I
IL _____ JI
8-100


Part Number VN1706
Description N-Channel Enhancement-Mode Vertical DMOS Power FETs
Maker Supertex
Total Page 2 Pages
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