* o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C,ss and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhanc
VP05E
Supertex
224.43 KB
P-channel enhancement-mode vertical dmos fets.
" upertexinc. VP05E Ordering Information BVoss ' BVOGS -450V -500V ROS(ON) (max) 1250 1250 P-Channel Enhancement-Mode Vertical DMOS Power FET.
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