D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices
Order Number I Package
TO-39
TO-92
VP0808B VP1008B
VP0808L VP1008L
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturi.
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VP0808 VP1008
P-Channel Enhancement-Mode Vertical DMOS Power FETs
Ordering Information
BVoss I BVOGS
-80V -100V
ROSION) (max)
5f.! 5f.!
JOlON) (min)
-UA -1.1A
Features
D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices
Order Number I Package
TO-39
TO-92
VP0808B VP1008B
VP0808L VP1008L
Advanced DMOS Technology
These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process.
VP1008 Datasheet
