* D Freedom from secondary breakdown D Low power drive requirement D Ease of paralleling D Low CISS and fast switching speeds D Excellent thermal stability D Integral Source-Drain diode D High input impedance and high gain D Complementary N- and P-Channel devices Order Number I Package TO-39 TO-92
VP1008
Supertex
113.10 KB
P-channel enhancement-mode vertical dmos fets.
IIl1 "-11 u per tex inc. VP0808 VP1008 P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVOGS -80V -100.
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