VN1206 Datasheet (Supertex Inc)

VN1206 Description

This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coef

VN1206 Features

* Free from secondary breakdown

* Low power drive requirement

* Ease of paralleling

* Low CISS and fast switching speeds

* Excellent thermal stability

* Integral source-drain diode

* High input impedance and high gain Applications

VN1206, N-Channel MOSFET - Supertex Inc

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VN1206 Description