• Part: F29C51001B
  • Manufacturer: SyncMOS
  • Size: 361.61 KB
Download F29C51001B Datasheet PDF
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F29C51001B Key Features

  • Sector-Erase Cycle Time: 10ms (Max)
  • Byte-Program Cycle Time: 20µs (Max) s Minimum 10,000 Erase-Program Cycles s Low power dissipation
  • Active Read Current: 20mA (Typ)
  • Active Program Current: 30mA (Typ)
  • Standby Current: 100µA (Max) s Hardware Data Protection s Low VCC Program Inhibit Below 3.2V s Self-timed program/erase
  • DATA Polling
  • Toggle Bit s CMOS and TTL Interface s Available in two versions
  • F29C51001T (Top Boot Block)
  • F29C51001B (Bottom Boot Block) s Packages
  • 32-pin Plastic DIP

F29C51001B Description

The F29C51001T/F29C51001B is a high speed 131,072 x 8 bit CMOS flash memory. Programming or erasing.