NS10N65K mosfet equivalent, silicon n-channel power mosfet.
* Fast Switching
* Low ON Resistance(Rdson≤0.9Ω)
* Low Gate Charge (Typical Data: 29nC)
* Low Reverse transfer capacitances(Typical: 15pF)
s
* 10.
im
* Power switch circuit of adaptor and charger t Absolute（Tc=25℃ unless otherwise specified）：
Symbol
Parameter
.
NS10N65K , the silicon N-channel Enhanced VDMOSFET, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the
VDSS ID PD(TC=25℃) RDS(ON)
650
V
10
A
50
W
0.75
Ω
avalanc.
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