2N2369 Key Features
- High Speed Switching Application
- Low Power
- RoHS pliant
- 65 to +200
- VCEO(SUS) VCES VCBO VEBO
- VCE(sat)
- VBE(sat)
- 1.02 400 30 400 400
- Pulse Test: -Pulse Width=300µs, Duty Cycle=2%
- Part: 2N2369
- Manufacturer: Taitron Components (official site)
- Size: 174.35 KB
Other 2N2369 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Seme LAB |
2N2369 | Bipolar NPN Device |
Continental Device India |
2N2369 | NPN SILICON PLANAR EPITAXIAL TRANSISTORS |
Motorola Semiconductor |
2N2369 | Switching Transistors |
Philips Semiconductors |
2N2369 | NPN switching transistor |
STMicroelectronics |
2N2369 | Silicon Planar Epitaxial NPN transistor |
2N2369 Description
(800)-TAITRON (800)-824-8766 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH Page 1 of 4 High Speed Metal Can Transistor (NPN) 2N2369/2N2369A (T Ambient=25ºC unless noted otherwise) Symbol VCEO(SUS) VCES VCBO VEBO Description Collector-Emitter Voltage Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 2N2369 hFE D.C.