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TAITRON

BSS138 Datasheet Preview

BSS138 Datasheet

SMD Power MOSFET Transistor

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SMD Power MOSFET
Transistor (N-Channel)
BSS138
SMD Power MOSFET Transistor (N-Channel)
Features
Low On-Resistance:3.5
Low input capacitance:40pF
Low output capacitance:12pF
Low threshole:1.5V
Fast switching speed:20nS
RoHS Compliance
Application
DC to DC converter
Cellular & PCMCIA card
Cordless telephone
Power management in portable and battery etc.
SOT-23
Mechanical Data
Case:
Terminals:
Weight:
SOT-23, Plastic Package
Solderable per MIL-STD-202G, Method 208
0.008 gram
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
VDSS
VGS
ID
IDM
PD
RthJA
TJ,
TSTG
Description
Marking Code
Drain-Source Voltage
Gate-Source Voltage
Drain Current Continuous
Drain Current Pulsed (tp10µS)
Drain Power Dissipation
Thermal Resistance, Junction to Ambient
Storage Temperature Range
BSS138
J1
50
± 20
200
800
225
556
-55 to +150
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Unit
Conditions
V
V
mA
mA
mW
° C/W
°C
TA=25° C
TA=25° C
Rev. A/AH
Page 1 of 7




TAITRON

BSS138 Datasheet Preview

BSS138 Datasheet

SMD Power MOSFET Transistor

No Preview Available !

SMD Power MOSFET Transistor (N-Channel)
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
BSS138
Symbol
V(BR)DSS
VGS(th)
IGSS
Description
Drain-Source Breakdown Voltage
Gate-Source Threshold Voltage
Gate-Source Leakage Current
IDSS
Zero Gate Voltage Drain Current
RDS(ON) Drain-Source On-Resistance
gFS Forward Transconductance
Min.
50
0.5
-
-
-
-
-
100
Typ.
-
-
-
-
-
5.6
-
-
Max.
-
1.5
± 0.1
0.1
0.5
10
3.5
-
Unit
V
V
μA
μA
μA
mS
Conditions
VGS=0V, ID=250µA
VDS=VGS, ID=1mA
VDS=0V, VGS=±20V
VDS=25V, VGS=0V
VDS=50V, VGS=0V
VGS=2.75V, ID<200mA,
TA=-40 to +85 ° C
VGS=5.0V, ID=200mA
VDS=25V, ID=200mA,
f=1.0KHz
Dynamic Characteristics (T Ambient=25ºC unless noted otherwise)
Symbol
Ciss
Crss
Coss
ton
toff
Description
Input Capacitance
Reverse Transfer Capacitance
Output Capacitance
Switching Time Turn-On Time
Switching Time Turn-Off Time
Min.
-
-
-
-
-
Typ.
40
3.5
12
-
-
Max.
50
5.0
25
20
20
Unit
pF
nS
Note: (1) Pulse Test: Pulse Width300μs, Duty Cycle2%
(2) Switching Time is Essentially Independent of Operating Temperature.
Conditions
VDS=25V, VGS=0V,
f=1MHz
VDD=30V, ID=200mA
www.taitroncomponents.com
Rev. A/AH
Page 2 of 7


Part Number BSS138
Description SMD Power MOSFET Transistor
Maker TAITRON
Total Page 7 Pages
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