BSS138 Datasheet | Specifications & PDF Download

http://www.ncepower.com Pb Free Product BSS138K NCE N-Channel Enhancement Mode Power MOSFET General Features ● VDS = 50V,ID = 0.22A RDS(ON) < 3Ω @

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Features: •  Low On-Resisrance •  Low Gate Threshold Voltage •  Low Input Capacitance

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CYStech Electronics Corp. 50V N-CHANNEL Enhancement Mode MOSFET Spec. No. : C834C3 Issued Date : 2012.06.25 Revised Date : Page No. : 1/8 BSS138C3 F

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May 1995 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect tran

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Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet http://www.datasheet4u.com/ Free Datasheet htt

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SMD Power MOSFET Transistor (N-Channel) BSS138 SMD Power MOSFET Transistor (N-Channel) Features • Low On-Resistance:3.5Ω • Low input capacitance:40pF

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Public BSS138I Final datasheet Small‑Signal Transistor Features • N‑channel • Enhancement mode • Logic level • dv/dt rated • Pb‑free lead‑plating; R

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Main Product Characteristics: VDSS 60V RDS(on) 2.5Ω (Max) ID 0.3A SOT-23 BSS138CR Pin Assignments Schematic Diagram Features and Benefits: 

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ N-Channel Enhancement Mode Logic Level SOT-23 MOSFET Typical applications are dc–dc converters, power manag

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MOSFET BSS138-G N-Channel 50-V(D-S) MOSFET RoHS Device Features -High density cell design for extremely low RDS(ON). -Rugged and Reliable. Mechanical

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Features • Voltage Controlled Small Signal Switch • Surface Mount Package • Moisture Sensitivity Level 1 • Halogen Free. Green Device (Note 1) • Epo

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LBSS138DW1T1G S-LBSS138DW1T1G Power MOSFET 200 mAmps, 50 Volts N–Channel SC-88 1. FEATURES ● We declare that the material of product compliance with

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LBSS138DW1T1G S-LBSS138DW1T1G Power MOSFET 200 mAmps, 50 Volts N–Channel SC-88 1. FEATURES ● We declare that the material of product compliance with

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N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138 General Description These N−Channel enhancement mode field effect transistors ar

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BSS138K — N-Channel Logic Level Enhancement Mode Field Effect Transistor May 2013 BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transis

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LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts N–Channel SOT–23 Typical applications are dc–dc converters, power management in portable

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Main Product Characteristics: VDSS 60V RDS(on) 2.2Ω (Max) ID 0.3A SOT-23 BSS138C Pin Assignments Schematic Diagram Features and Benefits: 

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BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-chan

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BSS138PS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description Dual N-chan

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LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts N–Channel SC-70 Typical applications are dc–dc converters, power management in portable

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