BSS138 Datasheet | Specifications & PDF Download

BSS138K 50V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 0.31A Description and Appl

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LESHAN RADIO COMPANY, LTD. Dual Integrated Circuit N-Channel/PN Duals • We declare that the material of product compliance with RoHS requirements.

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LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts N–Channel SOT–23 Typical applications are dc–dc converters, power management in portable

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LBSS138DW1T1G S-LBSS138DW1T1G Power MOSFET 200 mAmps, 50 Volts N–Channel SC-88 1. FEATURES ● We declare that the material of product compliance with

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA ™ N-Channel Enhancement Mode Logic Level SOT-23 MOSFET Typical applications are dc–dc converters, power manag

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N-Channel Logic Level Enhancement Mode Field Effect Transistor BSS138 General Description These N−Channel enhancement mode field effect transistors ar

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LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts N–Channel SC-70 Typical applications are dc–dc converters, power management in portable

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LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts N–Channel SC-70 Typical applications are dc–dc converters, power management in portable

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LESHAN RADIO COMPANY, LTD. Power MOSFET 200 mAmps, 50 Volts N–Channel SOT–23 Typical applications are dc–dc converters, power management in portable

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BSS138P 60 V, 360 mA N-channel Trench MOSFET Rev. 1 — 2 November 2010 Product data sheet 1. Product profile 1.1 General description N-channel enhan

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Main Product Characteristics: VDSS 60V RDS(on) 2.2Ω (Max) ID 0.3A SOT-23 BSS138C Pin Assignments Schematic Diagram Features and Benefits: 

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Main Product Characteristics BVDSS 50V RDS(ON) ID 3.5Ω 220mA Features and Benefits § Advanced MOSFET process technology § Ideal for high efficien

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SOT-  Plastic-Encapsulate MOSFETS BSS138.5 N-Channel 50-V(D-S) MOSFET FEATURE Low On-Resistance Low Gate Threshold Voltage Fast Switching Speed L

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CYStech Electronics Corp. 50V N-CHANNEL Enhancement Mode MOSFET Spec. No. : C834C3 Issued Date : 2012.06.25 Revised Date : Page No. : 1/8 BSS138C3 F

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LBSS138DW1T1G S-LBSS138DW1T1G Power MOSFET 200 mAmps, 50 Volts N–Channel SC-88 1. FEATURES ● We declare that the material of product compliance with

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LESHAN RADIO COMPANY, LTD. Dual Integrated Circuit N-Channel/PN Duals • We declare that the material of product compliance with RoHS requirements.

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May 1995 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect tran

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BSS138DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 200mA D

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SIPMOS® Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant • Qualifie

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BSS138DWQ DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary BVDSS 50V RDS(ON) Max 3.5Ω @ VGS = 10V ID Max TA = +25°C 200mA

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