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IRFS830 - N-Channel Power MOSFET

Datasheet Summary

Description

Low on resistance Improved inductive ruggedness Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability TO-220F

Features

  • VDSS=500V, ID=3.1A.
  • RDS(ON) ≤ 1.5 Ω @ VGS=10V Pin Configuration 1: Gate 2: Drain 3: Source TO-220F.

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Datasheet preview – IRFS830

Datasheet Details

Part number IRFS830
Manufacturer TAITRON
File Size 594.38 KB
Description N-Channel Power MOSFET
Datasheet download datasheet IRFS830 Datasheet
Additional preview pages of the IRFS830 datasheet.

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Full PDF Text Transcription

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500V/3.1A N-Channel Power MOSFET (Discontinued) IRFS830 SAMSUNG General Description  Low on resistance  Improved inductive ruggedness  Fast switching time  Rugged polysilicon gate cell structure  Lower input capacitance  Extended safe operating area  Improved high temperature reliability TO-220F Features  VDSS=500V, ID=3.1A  RDS(ON) ≤ 1.5 Ω @ VGS=10V Pin Configuration 1: Gate 2: Drain 3: Source TO-220F TAITRON INTERNET SUPER STORE (TISS) www.taitroncomponents.com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/PQ Page 1 of 10 IRFS830 SAMSUNG Absolute Maximum Ratings Symbol Description IRFS830 VDSS VDGR VGS ID ID IDM IGM EAS IAS Drain-Source Voltage (1) Drain-Gate Voltage (RGS =1.
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