Datasheet Details
| Part number | MJ11032 |
|---|---|
| Manufacturer | TAITRON |
| File Size | 333.29 KB |
| Description | Darlington Power Transistors |
| Datasheet |
 MJ11032 Datasheet
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General Description
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Continuous Collector Current Peak Base Current Collector Power Dissipation at TC=25°C Derate above 25°C Thermal Resistance from Junction to Case Operating Junction and Storage Temperature Range
Value
120 120 5.0
Key Features
- Designed for use as output devices in complementary General purpose amplifier.
- High Gain Darlington performance.
- High DC Current Gain: hFE=1000 (min) @ Ic=25A hFE=400 (min) @ Ic=50A.
- Monolithic construction with built-in base-emitter shunt resistor.
- RoHS Compliant TO-3 Mechanical Data.
- Case: TO-3, Metal Can Package Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol VCBO VCEO VEBO IC ICM IB PC Rthjc TJ, TSTG.