MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this.
MJ11032 - 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJ11028/D High-Current Complementary Silicon Transistors . . . for use as output devic.MJ11032 - COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
MJ11028, MJ11030, MJ11032 (NPN) MJ11029, MJ11033 (PNP) High-Current Complementary Silicon Power Transistors High−Current Complementary Silicon Power .MJ11032 - COMPLEMENTARY DARLINGTON POWER TRANSISTOR
NPN PNP MJ11029 MJ11031 MJ11033 LAB MECHANICAL DATA Dimensions in mm (inches) 25.4 (1.0) 10.92 (0.430) 1.57 (0.062) SEME MJ11028 MJ11030 MJ11032 .MJ11032 - Darlington Power Transistors
Darlington Power Transistors (NPN) MJ11032 Darlington Power Transistors (NPN) Features Designed for use as output devices in complementary General .MJ11032 - Silicon NPN Transistor
MJ11032 (NPN) & MJ11033 (PNP) Silicon Darlington Transistors High Current, General Purpose TO−3 Type Package Description: The MJ11032 (NPN) and MJ110.MJ11032 - Power Transistor
MJ11028, MJ11030, MJ11032 – NPN MJ11029, MJ11031, MJ11033 – PNP High-reliability discrete products and engineering services since 1977 COMPLEMENTARY.MJ11032 - NPN Transistor
isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·High DC Current Gain- : hFE= 1000.