MJ11032 Description
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 25A.
MJ11032 is NPN Transistor manufactured by Inchange Semiconductor.
| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
MJ11032 | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
onsemi |
MJ11032 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
Seme LAB |
MJ11032 | COMPLEMENTARY DARLINGTON POWER TRANSISTOR |
NTE Electronics |
MJ11032 | Silicon NPN Transistor |
DIGITRON |
MJ11032 | Power Transistor |
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 25A.