Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) - High DC Current Gain- : hFE= 1000(Min.)@IC= 25A : hFE= 400(Min.)@IC= 50A - plement to the PNP MJ11033 - Minimum Lot-to-Lot variations for robust device performance and reliable operation MJ11032.
| Part Number | Manufacturer | Description |
|---|---|---|
| MJ11032 | Motorola Semiconductor | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| MJ11032 | onsemi | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| MJ11032 | Seme LAB | COMPLEMENTARY DARLINGTON POWER TRANSISTOR |
| MJ11032 | NTE Electronics | Silicon NPN Transistor |
| MJ11030 | onsemi | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| MJ11030 | Seme LAB | COMPLEMENTARY DARLINGTON POWER TRANSISTOR |
| MJ11031 | Motorola Semiconductor | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
| MJ11033 | NTE Electronics | Silicon PNP Transistor |
