MJ11032 Overview
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 25A.
NPN Transistor
| Part number | MJ11032 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 203.27 KB |
| Description | NPN Transistor |
| Datasheet | MJ11032-INCHANGE.pdf |
|
|
|
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 120V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 25A.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
![]() |
MJ11032 | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS | Motorola |
![]() |
MJ11032 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS | ON |
![]() |
MJ11032 | COMPLEMENTARY DARLINGTON POWER TRANSISTOR | Seme LAB |
![]() |
MJ11032 | Silicon NPN Transistor | NTE |
![]() |
MJ11032 | Power Transistor | DIGITRON |
See all Inchange Semiconductor datasheets
| Part Number | Description |
|---|---|
| MJ11030 | NPN Transistor |
| MJ11031 | PNP Transistor |
| MJ11033 | PNP Transistor |
| MJ11011 | PNP Transistor |
| MJ11012 | NPN Transistor |
| MJ11014 | NPN Transistor |
| MJ11015 | PNP Transistor |
| MJ11017 | PNP Transistor |
| MJ11018 | NPN Transistor |
| MJ11019 | PNP Transistor |