MJ11030 Description
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 90V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 25A.
| Part number | MJ11030 |
|---|---|
| Download | MJ11030 Datasheet (PDF) |
| File Size | 203.67 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Motorola Semiconductor |
MJ11030 | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
ON |
MJ11030 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS |
Seme LAB |
MJ11030 | COMPLEMENTARY DARLINGTON POWER TRANSISTOR |
DIGITRON |
MJ11030 | Power Transistor |
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 90V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 25A.