MJ11030 Overview
·Collector-Emitter Breakdown Voltage : V(BR)CEO= 90V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 25A.
| Part number | MJ11030 |
|---|---|
| Datasheet | MJ11030-INCHANGE.pdf |
| File Size | 203.67 KB |
| Manufacturer | Inchange Semiconductor |
| Description | NPN Transistor |
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·Collector-Emitter Breakdown Voltage : V(BR)CEO= 90V(Min.) ·High DC Current Gain- : hFE= 1000(Min.)@IC= 25A.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
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MJ11030 | 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS | Motorola |
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MJ11030 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS | ON |
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MJ11030 | COMPLEMENTARY DARLINGTON POWER TRANSISTOR | Seme LAB |
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MJ11030 | Power Transistor | DIGITRON |
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