MJ11030
Overview
- HIGH DC CURRENT GAIN HFE = 1000 Min @ IC = 25A HFE = 400 Min 0@ IC = 50A
- CURVES TO 100A (Pulsed)
- DIODE PROTECTION TO RATED IC
- MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE - EMITTER SHUNT RESISTOR
- 1 (0.161 +0.4 -0 +0.016 -0 )
- 0 ± 0.1 (0.157 ± 0.004)
- 65 ± 0.35 (0.459 ± 0.014)
- 0 (0.354)
- JUNCTION TEMPERATURE TO +200°C Tolerance ±
- 127 unless otherwise stated (0.005)
