Part MJ11030
Description COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
Category Transistor
Manufacturer onsemi
Size 116.12 KB
onsemi
MJ11030

Overview

  • High DC Current Gain - hFE = 1000 (Min) @ IC = 25 Adc hFE = 400 (Min) @ IC = 50 Adc
  • Curves to 100 A (Pulsed)
  • Diode Protection to Rated IC
  • Monolithic Construction with Built-In Base-Emitter Shunt Resistor
  • Junction Temperature to + 200_C
  • Pb-Free Packages are Available*