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MJD31C - SMD Power Transistor

Description

MJD31C Marking Code MJD31C VCEO Collector-Emitter Voltage 100 VCBO Collector-Base Voltage 100 VEBO Emitter-Base Voltage 5 IC Collector Current Continuous 3 ICP Collector Current Peak 5 IB Base Current 1 Power Dissipation at TC=25°C PD Derate above 25°C 15 0.12 PD TJ, TSTG

Features

  • Designed for general purpose amplifier and low speed switching.

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Datasheet Details

Part number MJD31C
Manufacturer TAITRON
File Size 214.27 KB
Description SMD Power Transistor
Datasheet download datasheet MJD31C Datasheet

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Full PDF Text Transcription

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SMD Power Transistor (NPN) MJD31C SMD Power Transistor (NPN) Features • Designed for general purpose amplifier and low speed switching applications • RoHS compliance Mechanical Data Case: Terminals: Weight: D-PACK(TO-252), Plastic Package Solderable per MIL-STD-202G, Method 208 0.3 grams D-PACK (TO-252) Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MJD31C Marking Code MJD31C VCEO Collector-Emitter Voltage 100 VCBO Collector-Base Voltage 100 VEBO Emitter-Base Voltage 5 IC Collector Current Continuous 3 ICP Collector Current Peak 5 IB Base Current 1 Power Dissipation at TC=25°C PD Derate above 25°C 15 0.12 *PD TJ, TSTG Power Dissipation at TA=25°C Derate above 25°C Operating and Storage Junction Temperature Range 1.56 0.
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