900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






TAITRON

MJD31C Datasheet Preview

MJD31C Datasheet

SMD Power Transistor

No Preview Available !

SMD Power Transistor (NPN)
MJD31C
SMD Power Transistor (NPN)
Features
Designed for general purpose amplifier and low speed switching applications
RoHS compliance
Mechanical Data
Case:
Terminals:
Weight:
D-PACK(TO-252), Plastic Package
Solderable per MIL-STD-202G, Method 208
0.3 grams
D-PACK
(TO-252)
Maximum Ratings (T Ambient=25ºC unless noted otherwise)
Symbol
Description
MJD31C
Marking Code
MJD31C
VCEO
Collector-Emitter Voltage
100
VCBO
Collector-Base Voltage
100
VEBO
Emitter-Base Voltage
5
IC Collector Current Continuous
3
ICP Collector Current Peak
5
IB Base Current
1
Power Dissipation at TC=25°C
PD
Derate above 25°C
15
0.12
*PD
TJ, TSTG
Power Dissipation at TA=25°C
Derate above 25°C
Operating and Storage Junction Temperature
Range
1.56
0.012
-65 to +150
TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com
Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060
Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415
Unit
V
V
V
A
A
A
W
W/°C
W
W/°C
°C
Rev. B/CZ
Page 1 of 4




TAITRON

MJD31C Datasheet Preview

MJD31C Datasheet

SMD Power Transistor

No Preview Available !

SMD Power Transistor (NPN)
MJD31C
Thermal Characteristics
Symbol
Description
MJD31C
RthJC
Thermal Resistance from Junction to Case
8.3
*RthJA
Thermal Resistance from Junction to Ambient
80
TL Lead Temperature for Soldering
260
Note: *These ratings are applicable when surface mounted on the minimum pad sizes recommended.
Unit
°C/W
°C/W
°C
Electrical Characteristics (T Ambient=25ºC unless noted otherwise)
Off Characteristics
Symbol
VCEO
ICEO
ICES
IEBO
Description
Collector Emitter Voltage
Collector Cut-off Current
Collector Cut-off Current
Emitter Cut-off Current
Min.
100
-
-
-
Max.
-
50
20
1
Unit
V
µA
µA
mA
Conditions
IC=1mA, IB=0
VCE=60V, IB=0
VCE=Rated VCEO, VEB=0
VEB=5V, IC=0
On Characteristics (**)
Symbol
VCE(sat)
VBE(on)
Description
Collector Emitter Saturation Voltage
Base Emitter on Voltage
hFE D.C. Current Gain
Min.
-
-
25
10
Max.
1.2
1.8
-
50
Unit
V
V
Conditions
IC=3A, IB=0.375A
VCE=4V, IC=3A
VCE=4V, IC=1A
VCE=4V, IC=3A
Dynamic Characteristics
Symbol
Description
***fT
Current Gain Bandwidth Product
hfe Small Signal Current Gain
Note: ** Pulse Test: Pulse Width300µs, Duty Cycle2%.
*** fT=|hfe|. ftest
Min.
3
20
www.taitroncomponents.com
Typ.
-
-
Unit
MHz
Conditions
VCE=10V, IC=500mA,
f=1MHz
VCE=10V, IC=500mA,
f=1KHz
Rev. B/CZ
Page 2 of 4


Part Number MJD31C
Description SMD Power Transistor
Maker TAITRON
Total Page 4 Pages
PDF Download

MJD31C Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 MJD31 Complementary Power Transistors
Kexin
2 MJD31 COMPLEMENTARY PLASTIC POWER TRANSISTORS
CDIL
3 MJD31 NPN Epitaxial Silicon Transistor
Fairchild
4 MJD31 SILICON POWER TRANSISTORS
Motorola
5 MJD31 (MJD31 / MJD32) Complementary Power Transistors
ON Semiconductor
6 MJD31B Complementary Silicon Power Transistors
ST Microelectronics
7 MJD31C 100V NPN HIGH VOLTAGE TRANSISTOR
Diodes
8 MJD31C Silicon NPN Power Transistor
Inchange Semiconductor
9 MJD31C Complementary Power Transistors
Kexin





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy