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P-Channel Enhancement-Mode MOSFET
Si9407DY
Product Summary
VDS (V) –60
rDS(on) (W) 0.150 @ VGS = –10 V 0.240 @ VGS = –4.5 V
SO-8
S1 S2 S3 G4
8D 7D 6D 5D
Top View
ID (A) "3.0 "2.4
SSS
G
DDDD P-Channel MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range
TA = 25_C TA = 70_C
TA = 25_C TA = 70_C
VDS VGS
ID IDM IS
PD TJ, Tstg
–60 V
"20
"3.0
"2.4 A
"12
–2.5
2.5 W
1.6
–55 to 150
_C
Thermal Resistance Ratings
Parameter
Symbol
Limit
Unit
Maximum Junction-to-Ambienta
RthJA
50
_C/W
Notes a.
Si9407DY Datasheet
