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BSS84W Datasheet Preview

BSS84W Datasheet

P-CHANNEL 130mA POWER MOSFET

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P-CHANNEL 130mA POWER MOSFET
BSS84W
FEATURES
ADVANCED TRENCH PROCESS TECHNOLOGY
HIGH DENSITY CELL DESIGN FOR ULTRA LOW ON-RESISTANCE
FULLY CHARACTERIZED AVALANCHE VOLTAGE AND
CURRENT
IMPROVED SHOOT-THROUGH FOM
BOTH NORMAL AND PB FREE PRODUCT
ARE AVAILABLE :NORMAL : 80~95% SN, 5~20% PB
PB FREE: 99% SN ABOVE
MECHANICAL DATA
WE DECLARE THAT THE MATERIAL OF PRODUCT
COMPLIANCE WITH ROHS REUIREMENTS.
Pb Free: BSS84W
Halogen Free: BSS84W-H
CASESOT-323
DIMENSIONS IN MILLIMETERS AND (INCHES)
ABSOLUTE MAXIMUM RATINGS
RATINGS AT 25°C AMBIENT TEMPERATURE UNLESS OTHERWISE SPECIFIED.
PATING
SYMBOL
DRAIN-SOURCE VOLTAGE
GATE-SOURCE VOLTAGE
MAXIMUM DRAIN CURRENT-CONTINUE
MAXIMUM POWER DISSIPATION DERATING @ TA = 25°C
OPERATING AND STORAGE JUNCTION TEMPERATURE
RANGE
THERMAL RESISTANCE, JUNCTION−TO−AMBIENT (NOTE1)
VDSS
VGSS
ID
PD
TJ;TSTG
RθJA
NOTE:1. 1-in2 2oz Cu PCB board
BSS84W
50
±20
130
225
- 55 TO +150
556
UNITS
V
V
mA
mW
/W
STD-2008-Z0
PAGE.1




TIPTEK

BSS84W Datasheet Preview

BSS84W Datasheet

P-CHANNEL 130mA POWER MOSFET

No Preview Available !

ELECTRICAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (AT TA =25°C UNLESS OTHERWISE NOTED)
CHARACTERISTIC
SYMBOL
MIN
OFF CHARACTERISTICS
Drain-Source Breakdown
Voltage
VGS =0V, ID =250µA
V(BR)DSS
50
VDS =25V, VGS =0V, TJ =25°C
Zero Gate Voltage Drain Current VDS =50V, VGS =0V, TJ =25°C
VDS =50V, VGS =0V, TJ =125°C
Gate-Body Leakage Current (VDS=0, VGS =±20V)
ON CHARACTERISTICS (NOTE 1)
IDSS
IGSS
Gate Threshold Voltage(VDS = VGS, ID =1.0mA)
VGS(th)
0.8
Static Drain-Source
Resistance
On- VGS=5.0V, ID=100mA
rDS(ON)
Transfer Admittance (VDS =25V, ID=100 mA,f=1.0KHz)
yfs
50
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
Gate Charge
VDS=25V, VGS=0V, f=1.0MHz
CISS
Coss
CRSS
QT
SWITCHING CHARACTERISTICS (NOTE 2)
Turn-On Time
Turn-Off Time
VDD=-15V,RL=50Ω, ID= -2.5A
TON
TOFF
SOURCE-DRAIN DOIDE CHARACTERISTICS
Continuous Current
Pulsed Current
Forward Voltage (NOTE 2)
IS
ISM
VSD
NOTE: 1. Pulse Test: Pulse Width <300 us, Duty Cycle <2.0%.
2.Switching characteristics are independent of operating junction temperature.
TYP
5.0
30
10
5.0
6000
2.5
16
2.5
BSS84W
MAX
0.1
15
60
±10
2.0
10
0.13
0.52
UITS
V
µA
nA
V
Ω
mS
pF
pF
pF
pC
ns
ns
A
V
STD-2008-Z0
PAGE.2


Part Number BSS84W
Description P-CHANNEL 130mA POWER MOSFET
Maker TIPTEK
Total Page 4 Pages
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