SI2305DS - P-Channel Power MOSFET

General Description

SI2305DS is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.

This hight-density process is especially tailored tominimize on-state resistance.

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SI2305DS p-channel power mosfet by TOPSKY - Datasheet Preview

Datasheet Details

Part number	SI2305DS
Manufacturer	TOPSKY
File Size	3.50 MB
Description	P-Channel Power MOSFET
Datasheet	SI2305DS Datasheet

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P-Channel Power MOSFE Production specification SI2305DS DESCRIPTION SI2305DS is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This hight-density process is especially tailored tominimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits,and low in-line power loss are required. The product is in a very small outline surface mount package. FEATURE 20V/3.3A, RDS(ON) = 68mΩ @VGS = 4.5V 20V/2.2A, RDS(ON) = 89mΩ @VGS = 2.