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Electronics
L I M I T E D
SOT-323 Plastic-Encapsulated Diode
DAN202U
FEATURES:
1. 25¡ À0. 05
1. 01 R EF
SWITCHING DIODE
SOT-323
Power dissipation PD: 200 mW (Tamb=25℃)
1. 30¡ À0. 03
2. 30¡ À0. 05
Collector current 100 mA IF: Collector-base voltage 80 V VR: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ CIRCUIT:
Unit: mm
www.DataSheet.co.kr
1 3 2
MARKING: N
ELECTRICAL CHARACTERISTICS (Tamb=25℃
Parameter Reverse breakdown voltage Reverse voltage leakage current Forward voltage Diode capacitance Reverse recovery time Symbol V(BR) IR VF CD trr
unless otherwise specified)
Test conditions MIN 80 0.1 1.2 3.5 4 MAX UNIT V
IR= 100µA VR=70V IF=100mA VR=6V, f=1MHz VR=6V, IF=5mA
0. 30
2. 00¡ À0. 05
µA
V
pF ns
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