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IRF840A
Power MOSFET
VDSS = 500V, RDS(on) = 0.85 ohm, ID = 8.0 A
Drain
D
Gate Drain Source
N Channel
G Symbol S
ELECTRICAL CHARACTERISICS at Tj = 25 C Maximum. Unless stated Otherwise
Parameter
Symbol
Test Conditions
Drain to Source Breakdown Voltage Drain to Source Leakage Current
Gate to Source Leakage Current Gate Threshold Voltage
V(BR)DSS VGS = 0 VDC, ID = 250µA
IDSS
VDS = 500VDC, VGS = 0VDC VDS = 400VDC, VGS = 0VDC Tj=125 C
IGSS VGS(th)
VGS = +30VDC VGS = -30VDC VDS = VGS, ID = 250µA
Static Drain to Source On - Resistance RDS(on) VGS= 10VDC, ID = 4.8A
Value
Min Typ
500 ----2.0 -
--
Max Unit
- Volt
25 250 µA
100 nA -100 nA 4.0 Volt
0.