2N5682 Datasheet | TRANSYS Electronics Limited

DESCRIPTION SYMBOL 2N5679 2N5681 100 100 2N5680 2N5682 120 120 UNITS V V V A A W m W/deg C W m W/deg C deg C VCEO Collector -Emitter Voltage VCBO Collector -Base Voltage VEBO 4.0 Emitter -Base Voltage IC 1.0 Collector Current Continuous IB 0.5 Base Current PD 1.0 Power Dissipation @Ta=25 deg C 5.7 Derate Above 25deg C PD 10 Power Dissipation @Tc=25 deg C 57 Derate Above 25deg C Tj, Tstg -65 to +200 Operating And Storage Junction Temperature Range THERMAL RESISTANCE Rth(j-c) 17.5 Junction to Case Rth(j-a) 175 Junction to Ambient ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 2N5679 2N5681 VCEO(sus) IC=10m A,IB=0 >100 Collector -Emitter Voltage ICBO VCB=100V, IE=0 <1.0 Collector-Cut off Current VCB=120V, IE=0 ICEO VCE=70V, IB=0 <10 VCE=80V, IB=0 ICEX VCE=100V,VEB=1.5V <1.0 VCE=120V,VEB=1.5V TC=150 deg C VCE=100V,VEB=1.5V VCE=120V,VEB=1.5V VEB=4V, IC=0 deg C/W deg C/W 2N5680 2N5682 >120 <1.0 <10 <1.0 UNITS V u A u A u A u A u A u A Emitter-Cut off Current IEBO <1.0 <1.0 <1.0 <1.0 m A m A u A .. ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) 2N5679-82 DESCRIPTION SYMBOL TEST CONDITION 2N5679 2N5680 2N5681 2N5682 h FE- IC=1A,VCE=2V >5.0 DC Current Gain IC=250m A,VCE=2V 40-150 40-150 <0.60 <0.60 Collector Emitter Saturation Voltage VCE(Sat)- IC=250m A,IB=25m A IC=500m A,IB=50m A <1.0 <1.0 IC=1A, IB=200m A <2,0 <2.0 VBE(on)- IC=250m A,VCE=2V <1.0 <1.0 Base Emitter on Voltage SMALL SIGNAL CHARACTERISTICS Small Signal Current Gain Out-Put Capacitance Transistors Frequency UNITS V V V V hfe Cob ft IC=200m A, VCE=1.5V f=1k Hz VCB=20V, IE=0 f=1MHz IC=100m A, VCE=10V f=10MHz >20 <50 >30 >20 <50 >30 p F MHz - Pulse Test: Pulse Width: =300us, Duty Cycle=2% TO-39 Metal Can Package 2 1 3 All dimensions are in mm DIM A B C D E F G H J K L M IN MAX 8.50 9.39 7.74 8.50 6.09 6.60 0.40 0.53 - 0.88 2.41 2.66 4.82 5.33 0.71 0.86 0.73 1.02 12.70 - 42 DE G 48 DE G 3 2 1 P IN C O N FIG U R ATIO N...