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2N2222AUA Datasheet Preview

2N2222AUA Datasheet

NPN Transistor

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Surface Mount NPN General
Purpose Transistor
2N2222AUA (TX, TXV)
Features:
 Ceramic 4 pin surface mount package
 Small package to minimize circuit board area
 Hermetically sealed
 Processed per MIL-PRF-19500/255
Description:
The 2N2222AUA (TX, TXV) is a herme cally sealed ceramic surface mount general purpose switching transistor. The four pin 
ceramic package is ideal for designs where board space and device weight are important design considera ons. The “UA” 
sux denotes the 4 terminal leadless chip carrier package, type “A” per MILPRF19500/255. 
 
Typical screening per MILPRF19500/255. The burnin condi on is VCB = 30 V. PD = 400 mW, TA = 25°C, t = 80 hrs. Refer to 
MILPRF19500/255 for complete requirements. In addi on, the TX and TXV versions receive 100% thermal response 
tes ng. 
 
When ordering parts without processing, do not use the TX or TXV sux. 
 
Applications:
 General switching
 Amplification
 Signal processing
 Radio transmission
 Logic gates
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
 
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B 08/2016 Page 1




TT

2N2222AUA Datasheet Preview

2N2222AUA Datasheet

NPN Transistor

No Preview Available !

Surface Mount NPN General
Purpose Transistor
2N2222AUA (TX, TXV)
Electrical Specifications
Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
CollectorBase  Voltage  
CollectorEmi er Voltage 
Emi erBase Voltage 
Collector CurrentCon nuous 
Opera ng Junc on Temperature (TJ) 
Storage Junc on Temperature (Tstg) 
Power Dissipa on @ TA = 25°C 
Power Dissipa on @ Tc = 25° C 
Soldering Temperature (vapor phase reow for 30 seconds) 
Soldering Temperature (heated collet for 5 seconds) 
75V 
50V 
6.0V 
800mA 
65° C to +200 °C 
65° C to +200° C 
0.5 W 
1.16 W(1) 
215° C 
260° C 
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
PARAMETER
MIN MAX
OFF CHARACTERISTICS  
V(BR)CBO  CollectorBase Breakdown Voltage 
75   
V(BR)CEO  CollectorEmi er Breakdown Voltage 
50   
V(BR)EBO  Emi erBase Breakdown Voltage 
ICBO   CollectorBase Cutoff Current  
6.0   
  10 
  10 
IEBO  Emi erBase Cutoff Current 
  10 
ICES  Collector Emi er Cutoff Current 
  50 
ON CHARACTERISTICS  
50   
75  325 
hFE   ForwardCurrent Transfer Ra o 
100   
100  300 
30   
35   
Note: 
1. Derate linearly 6.6 mW/°C above 25° C   
2. Pulse Width ≤300 µs, Duty Cycle ≤ 2.0% 
UNITS
TEST CONDITIONS
V  IC = 10 µA, IE = 0 
V  IC = 10 mA, IB = 0 
V  IE = 10 µA, IC = 0 
nA  VCB = 60 V, IE = 0 
µA  VCB = 60 V, IE = 0, TA = 150° C 
nA  VEB = 4 V, IC = 0 
nA  VCE = 50 V 
‐  VCE = 10 V, IC = 0.1 mA 
‐  VCE = 10 V, IC = 1.0 mA 
‐  VCE = 10 V, IC = 10 mA 
‐  VCE = 10 V, IC = 150 mA(2) 
‐  VCE = 10 V, IC = 500 mA(2) 
‐  VCE = 10 V, IC = 10 mA, TA = ‐55°C 
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
OPTEK Technology, Inc.
1645 Wallace Drive, Carrollton, TX 75006|Ph: +1 972 323 2200
www.optekinc.com | www.ttelectronics.com
Issue B 08/2016 Page 2


Part Number 2N2222AUA
Description NPN Transistor
Maker TT
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2N2222AUA Datasheet PDF






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