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SILICON NPN TRANSISTOR
2N3700
• High Voltage, Medium Power Silicon Planar NPN Transistor • Hermetic TO18 Metal Package • High Reliability Screening Options Available • CECC and Space Quality Level Options
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage
140V
VCEO Collector – Emitter Voltage
80V
VEBO Emitter – Base Voltage
7.0V
IC Continuous Collector Current
1.0A
PD Total Power Dissipation at TA = 25°C
0.5W
Derate Above TA = 25°C
2.9mW/°C
TC = 25°C
1.0W
Derate Above TC = 25°C
5.7mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
2N3700 Datasheet
