2N5883 - SILICON EPITAXIAL PNP TRANSISTOR

Datasheet Details

Part number	2N5883
Manufacturer	TT
File Size	185.65 KB
Description	SILICON EPITAXIAL PNP TRANSISTOR
Datasheet	2N5883 Datasheet
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SILICON EPITAXIAL PNP TRANSISTOR 2N5883 • High Voltage, Low Saturation Voltages. • Hermetic TO3 Metal Package. • Designed For Power Switching and Linear Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -60V VCEO Collector – Emitter Voltage -60V VEBO Emitter – Base Voltage -5V IC Continuous Collector Current -25A ICM Peak Collector Current -50A IB Base Current -7.5A PD Total Power Dissipation at TC = 25°C 200W Derate Above 25°C 1.14W/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Max. 0.

Published: Jul 17, 2017 |