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2N697 Datasheet Preview

2N697 Datasheet

GENERAL PURPOSE SILICON NPN TRANSISTOR

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GENERAL PURPOSE
SILICON NPN TRANSISTOR
2N697
Hermetic TO39 (TO-205AD) Metal Package.
Ideally suited for General Purpose Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
60V
VCER
Collector – Emitter Voltage
40V
VEBO
Emitter – Base Voltage
5.0V
PD Total Power Dissipation at TA = 25°C
600mW
Derate Above 25°C
4.0mW/°C
PD Total Power Dissipation at TC = 25°C
2.0W
Derate Above 25°C
13.3mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Max.
290
88
Units
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8389
Issue 1
Page 1 of 2




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2N697 Datasheet Preview

2N697 Datasheet

GENERAL PURPOSE SILICON NPN TRANSISTOR

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SILICON PLANAR
EPITAXIAL NPN TRANSISTOR
2N697
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CER(1)
V(BR)CBO
V(BR)EBO
Collector-Emitter Breakdown
Voltage
Collector-Base Breakdown
Voltage
Emitter-Base Breakdown Voltage
IC = 10mA
IC = 100µA
IE = 100µA
RBE = 10
IE = 0
IC = 0
ICBO
Collector Cut-Off Current
VCB = 30V
IE = 0
VCE(sat)(1)
VBE(sat)(1)
hFE(1)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Forward-current transfer ratio
IC = 150mA
IC = 150mA
IC = 150mA
TA = 150°C
IB = 15mA
IB = 15mA
VCE = 10V
DYNAMIC CHARACTERISTICS
| hfe |
Small signal forward-current
transfer ratio
Cobo
Output Capacitance
Notes
(1) Pulse Width 300us, δ ≤ 2%
IC = 50mA
f = 20MHz
VCB = 10V
f = 1.0MHz
VCE = 10V
IE = 0
MECHANICAL DATA
Dimensions in mm (inches)
Min. Typ. Max. Units
40
60 V
5.0
1.0
µA
100
1.5
V
1.3
40 120
2.5
35
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
pF
TO39 (TO-205AD)
Underside View
Pin 1
Emitter
Pin 2
Base
Pin 3
Collector
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
(00..08395)max.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
13
2.54
(0.100)
45°
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
Document Number 8389
Issue 1
Page 2 of 2


Part Number 2N697
Description GENERAL PURPOSE SILICON NPN TRANSISTOR
Maker TT
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