OP298 diode equivalent, plastic infrared emitting diode.
* Choice of narrow or wide irradiance pattern
* Choice of power ranges
* Choice of T-1¾, TO-18 or TO-46 package
* Higher power output than GaAs at equiva.
such as battery supplies. They are similar to the OP290 and OP295, but use a smaller chip that increases output efficie.
Each device in this series, is a gallium aluminum arsenide infrared Light Emitting Diode (LED) that is molded in an IRtransmissive package with a wavelength centered at 890 nm, which closely matches the spectral response of silicon phototransistors,.
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