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TY Semiconductor

PXT8050 Datasheet Preview

PXT8050 Datasheet

Plastic-Encapsulate Transistors

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Product specification
SOT-89-3L Plastic-Encapsulate Transistors
PXT8050 TRANSISTOR (NPN)
SOT-89-3L
FEATURES
z Compliment to PXT8550
MARKING: Y1
MAXIMUM RATINGS (Ta=25unless otherwise noted)
1. BASE
2. COLLECTOR
3. EMITTER
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
40 V
VCEO
Collector-Emitter Voltage
25 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current -Continuous 1.5 A
PC Collector Power dissipation
0.5 W
TJ Junction Temperature
150
Tstg Storage Temperature
-55~150
ELECTRICAL CHARACTERISTICS (Ta=25unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage
V(BR)CBO IC=100uA, IE=0
Collector-emitter breakdown voltage
V(BR)CEO IC=0.1mA, IB=0
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
Collector cut-off current
ICBO
VCB=40V, IE=0
Emitter cut-off current
ICEO
VCE=20V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE(1)
hFE(2)
VCE=1V, IC=100mA
VCE=1V, IC=800mA
Collector-emitter saturation voltage
VCE(sat) IC=800mA, IB=80mA
Base-emitter saturation voltage
VBE(sat) IC=800mA, IB=80mA
Base-emitter voltage
VBE VCE=1V, IC=10mA
Base-emitter positive favor voltage
VBEF
IB=1A
Transition frequency
fT VCE=10V,IC=50mA,f=30MHz
output capacitance
Cob VCB=10V,IE=0,f=1MHz
CLASSIFICATION OF hFE(1)
Rank B C D
Range
85-160
120-200
160-300
Min
40
25
5
85
40
100
Typ Max Unit
V
V
V
0.1 μA
0.1 μA
0.1 μA
400
0.5 V
1.2 V
1V
1.55 V
MHz
15 pF
D3
300-400
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
1 of 2




TY Semiconductor

PXT8050 Datasheet Preview

PXT8050 Datasheet

Plastic-Encapsulate Transistors

No Preview Available !

0.30
0.25
0.20
0.15
0.10
0.05
0.00
0
1000
Static Characteristic
1mA
0.9mA
COMMON
EMITTER
Ta=25
0.8mA
0.7mA
0.6mA
0.5mA
0.4mA
0.3mA
0.2mA
IB=0.1mA
123456
COLLECTOR-EMITTER VOLTAGE VCE (V)
7
V ——
CEsat
I
C
100
10
1
1
1500
1000
Ta=100
Ta=25
10 100
COLLECTOR CURREMT IC (mA)
I ——
C
V
BE
β=10
1000 1500
1000
300
100
10
1
1200
1000
800
600
400
1
100
100
10
10
1
0
1000
COMMON EMITTER
VCE= 1V
300 600 900
BESE-EMMITER VOLTAGE VBE (mV)
1200
f
T
——
I
C
1
0.1
0.6
0.5
100 0.4
0.3
10
COMMON EMITTER
VCE=10V
Ta=25
1
2 10
100
COLLECTOR CURRENT IC (mA)
http://www.twtysemi.com
sales@twtysemi.com
0.2
0.1
0.0
0
PXT8050
Product specification
h —— I
FE C
Ta=100
Ta=25
COMMON EMITTER
VCE= 1V
10 100
COLLECTOR CURRENT IC (mA)
1000 1500
V ——
BEsat
I
C
Ta=25
Ta=100
10 100
COLLECTOR CURREMT IC (mA)
C /C ——
ob ib
V /V
CB EB
Cib
β=10
1000 1500
f=1MHz
IE=0/IC=0
Ta=25
Cob
1
REVERSE VOLTAGE V (V)
P —— T
Ca
10 20
25 50 75 100 125
AMBIENT TEMPERATURE Ta ()
4008-318-123
150
2 of 2


Part Number PXT8050
Description Plastic-Encapsulate Transistors
Maker TY Semiconductor
Total Page 2 Pages
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