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MBR30H100CT Datasheet

Manufacturer: Taiwan Semiconductor
MBR30H100CT datasheet preview

MBR30H100CT Details

Part number MBR30H100CT
Datasheet MBR30H100CT Datasheet PDF (Download)
File Size 193.19 KB
Manufacturer Taiwan Semiconductor
Description Dual Common Cathode Schottky Rectifier
MBR30H100CT page 2 MBR30H100CT page 3

MBR30H100CT Overview

2 MAXIMUM FORWARD SURGE CURRENT PER LEG 8.3ms Single Half Sine Wave JEDEC Method 10 NUMBER OF CYCLES AT 60 Hz 100 FORWARD CURRENT (A) FIG. I13 JUNCTION CAPACITANCE (pF) A TRANSIENT THERMAL IMPEDANCE (℃/W) CREAT BY ART 1000 FIG.

MBR30H100CT Key Features

  • Low power loss, high efficiency
  • Guardring for overvoltage protection
  • High surge current capability
  • pliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC
  • Halogen-free according to IEC 61249-2-21 definition
  • halogen-free Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity:
  • 55 to +175
  • 55 to +175

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