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TSCDT12065G1 - 650V SiC Merged PIN Schottky Diode

Description

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Features

  • Max junction temperature 175°C.
  • MPS structure for high ruggedness to forward current surge events.
  • High-speed switching possible.
  • High forward surge capability.
  • High-frequency operation.
  • Positive temperature coefficient on VF.
  • RoHS compliant.
  • Halogen-free KEY.

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Datasheet preview – TSCDT12065G1

Datasheet Details

Part number TSCDT12065G1
Manufacturer Taiwan Semiconductor
File Size 377.48 KB
Description 650V SiC Merged PIN Schottky Diode
Datasheet download datasheet TSCDT12065G1 Datasheet
Additional preview pages of the TSCDT12065G1 datasheet.

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Full PDF Text Transcription

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TSCDT12065G1 Taiwan Semiconductor 12A, 650V SiC Merged PIN Schottky Diode FEATURES ● Max junction temperature 175°C ● MPS structure for high ruggedness to forward current surge events ● High-speed switching possible ● High forward surge capability ● High-frequency operation ● Positive temperature coefficient on VF ● RoHS compliant ● Halogen-free KEY PARAMETERS PARAMETER VALUE UNIT IF 12 A VRRM 650 V IFSM 88 A TJ MAX 175 °C Package TO-220AC-2L Configuration Single die APPLICATIONS ● General purpose ● Switch mode power supplies ● Power factor correction MECHANICAL DATA ● Case: TO-220AC-2L ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Polarity: As circuit diagram ● Weight: 2.
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