logo

TSCDT12065G1 Datasheet

Download Datasheet
Taiwan Semiconductor · TSCDT12065G1 File Size : 377.48KB · 7 hits

Features and Benefits


● Max junction temperature 175°C
● MPS structure for high ruggedness to forward current surge events
● High-speed switching possible
● High forward surge capability
● High-frequency operation
● Positive temperature coefficient on VF
● RoHS compliant
● Halogen-free KEY PARAMETERS PARAMETER VALUE UN.

TSCDT12065G1 TSCDT12065G1 TSCDT12065G1
TAGS
650V
SiC
Merged
PIN
Schottky
Diode
TSCDT12065G1
TSCDT08065G1
TSCDT20065G1
Stock and Price
Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy