TSG65N195CE
TSG65N195CE is Power Transistor manufactured by Taiwan Semiconductor.
FEATURES
- 650 V enhancement mode power transistor
- 850 V transient drain-to-source voltage
- Bottom-cooled 8x8 mm PDFN package
- RDS(on)(Typ) = 150 mΩ
- DS(max) = 11 A / IDS(Max pulse) = 19A
- Ultra-low FOM
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- High switching frequency (> 1 MHz)
- Fast and controllable fall and rise times
- Reverse conduction capability
- Zero reverse recovery loss
- Source Sense (SS) pin for optimized gate drive
- ROHS pliant
- Halogen-free
APPLICATIONS
- Power Adapters
- LED Lighting Drivers
- Fast Battery Charging
- Power Factor Correction
- Appliance Motor Drives
- Wireless Power Transfer
- Industrial Power Supplies
Taiwan Semiconductor
KEY PERFORMANCE PARAMETERS
PARAMETER
VALUE UNIT
RDS(on)
VGS = 6V
195 mΩ
(max)
Qg
2.2 n C
PDFN88
ABSOLUTE MAXIMUM RATINGS (Tcase = 25 °C except as noted)
PARAMETER
SYMBOL
LIMIT...
