Description
The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
Features
- 1200V NPT Trench Technology High Speed Switching Low Conduction Loss
Block Diagram
Ordering Information
Part No. TSG40N120CE C0
Package
TO-264
Packing
25pcs / Tube NPT Trench IGBT
Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current.
- Diode Forward Current (TC=100℃) Diode Pulse Forward Current Max Power Dissipation Operating Junction Temperature Storage Temperature.