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TSG65N195CE - Power Transistor

Key Features

  • 650 V enhancement mode power transistor.
  • 850 V transient drain-to-source voltage.
  • Bottom-cooled 8x8 mm PDFN package.
  • RDS(on)(Typ) = 150 mΩ.
  • DS(max) = 11 A / IDS(Max pulse) = 19A.
  • Ultra-low FOM.
  • Simple gate drive requirements (0 V to 6 V).
  • Transient tolerant gate drive (-20 V / +10 V).
  • High switching frequency (> 1 MHz).
  • Fast and controllable fall and rise times.
  • Reverse conduction capability.
  • Zero reverse recovery loss.
  • Source Sen.

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Full PDF Text Transcription (Reference)

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FEATURES ● 650 V enhancement mode power transistor ● 850 V transient drain-to-source voltage ● Bottom-cooled 8x8 mm PDFN package ● RDS(on)(Typ) = 150 mΩ ● DS(max) = 11 A / IDS(Max pulse) = 19A ● Ultra-low FOM ● Simple gate drive requirements (0 V to 6 V) ● Transient tolerant gate drive (-20 V / +10 V) ● High switching frequency (> 1 MHz) ● Fast and controllable fall and rise times ● Reverse conduction capability ● Zero reverse recovery loss ● Source Sense (SS) pin for optimized gate drive ● ROHS Compliant ● Halogen-free APPLICATIONS ● Power Adapters ● LED Lighting Drivers ● Fast Battery Charging ● Power Factor Correction ● Appliance Motor Drives ● Wireless Power Transfer ● Industrial Power Supplies TSG65N195CE Taiwan Semiconductor KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 6