TSG65N195CE Description
Defined by product design and characterization. Value is not tested to full current in production. UNIT V V V V A °C °C 1 Version:.
TSG65N195CE Key Features
- 650 V enhancement mode power transistor
- 850 V transient drain-to-source voltage
- Bottom-cooled 8x8 mm PDFN package
- RDS(on)(Typ) = 150 mΩ
- DS(max) = 11 A / IDS(Max pulse) = 19A
- Ultra-low FOM
- Simple gate drive requirements (0 V to 6 V)
- Transient tolerant gate drive (-20 V / +10 V)
- High switching frequency (> 1 MHz)
- Fast and controllable fall and rise times