Description
The TSG25N120CN using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
Features
- 1200V NPT Trench Technology High Speed Switching Low Conduction Loss
Block Diagram
Ordering Information
Part No. TSG25N120CN C0
Package
TO-3PN
Packing
30pcs / Tube NPT Trench IGBT
Absolute Maximum Rating (TA=25oC unless otherwise noted)
Parameter
Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current.
- Diode Forward Current (TC=100℃) Diode Pulse Forward Current Max Power Dissipation Operating Junction Temperature Storage Temperature.
TSG25N120CN Datasheet
