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TSM033NB04LCR - N-Channel Power MOSFET

Datasheet Summary

Features

  • Low RDS(ON) to minimize conductive losses.
  • Logic level.
  • Low gate charge for fast power switching.
  • 100% UIS and Rg tested.
  • 175°C Operating Junction Temperature.
  • Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21.

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TSM033NB04LCR Taiwan Semiconductor N-Channel Power MOSFET 40V, 121A, 3.3mΩ FEATURES ● Low RDS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and Rg tested. ● 175°C Operating Junction Temperature ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● BLDC Motor Control ● Battery Power Management ● DC-DC converter ● Secondary Synchronous Rectification PDFN56 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 40 V VGS = 10V 3.3 RDS(on) (max) mΩ VGS = 4.
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