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TSM120NA03CR - N-Channel Power MOSFET

Key Features

  • Low RDS(ON) to minimize conductive loss.
  • Low gate charge for fast power switching.
  • 100% UIS and Rg tested.
  • Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC.
  • Halogen-free according to IEC 61249-2-21.

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Full PDF Text Transcription for TSM120NA03CR (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for TSM120NA03CR. For precise diagrams, and layout, please refer to the original PDF.

TSM120NA03CR Taiwan Semiconductor N-Channel Power MOSFET 30V, 39A, 11.7mΩ FEATURES ● Low RDS(ON) to minimize conductive loss ● Low gate charge for fast power switching ● ...

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minimize conductive loss ● Low gate charge for fast power switching ● 100% UIS and Rg tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC-DC Converters ● Battery Power Management ● ORing FET/Load Switch KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT RDS(on) (max) VDS VGS = 10V VGS = 4.5V Qg 30 11.7 14.9 4.

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