TSM12N65 Datasheet - Taiwan Semiconductor

650V N-Channel Power MOSFET

TSM12N65 Features

* Low RDS(ON) 0.68Ω (Typ.) Low gate charge typical @ 41nC (Typ.) Low Crss typical @ 14.6pF (Typ.) Fast Switching Block Diagram Ordering Information Part No. TSM12N65CI C0 Package ITO-220 Packing 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherw

TSM12N65 General Description

The TSM12N65 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. Fe.

TSM12N65 Datasheet (482.84 KB)

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TSM12N65

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Taiwan Semiconductor

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482.84 KB

Description:

650v n-channel power mosfet.
TSM12N65 650V N-Channel Power MOSFET ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) 650 RDS(on)(Ω) 0.8 @ VGS =10V ID (A.

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TSM12N65 650V N-Channel Power MOSFET Taiwan Semiconductor

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TSM12N65 Features

TSM12N65 General Description

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