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TSM15N50 - 500V N-Channel Power MOSFET

Description

The TSM15N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • Low RDS(ON) 0.44Ω (Max. ) Low gate charge typical @ 39nC (Typ. ) Improve dv/dt capability Block Diagram Ordering Information Part No. TSM15N50CZ C0 TSM15N50CI C0 Package TO-220 ITO-220 Packing 50pcs / Tube 50pcs / Tube N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current(TC=25℃) Pulsed Drain Current.
  • Peak Diode Recovery dv/dt (Note 3) Single Pulse Avalanche Energy (Note 2).

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Datasheet preview – TSM15N50

Datasheet Details

Part number TSM15N50
Manufacturer Taiwan Semiconductor
File Size 420.52 KB
Description 500V N-Channel Power MOSFET
Datasheet download datasheet TSM15N50 Datasheet
Additional preview pages of the TSM15N50 datasheet.

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Full PDF Text Transcription

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TSM15N50 500V N-Channel Power MOSFET TO-220 ITO-220 Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) 500 0.44 @ VGS =10V ID (A) 14 General Description The TSM15N50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply, electronic lamp ballast based on half bridge. Features ● ● ● Low RDS(ON) 0.44Ω (Max.) Low gate charge typical @ 39nC (Typ.) Improve dv/dt capability Block Diagram Ordering Information Part No.
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