Taiwan Semiconductor TSM100N06
60V N-Channel Power MOSFET
| Part No. | TSM100N06 |
|---|---|
| Datasheet | TSM100N06 Download |
| Manufacturer |  Taiwan Semiconductor |
| Description | 60V N-Channel Power MOSFET |
| Buy | Stock & Price |
FEATURES
● Advanced Trench Technology● Low RDS(ON) 6.7mΩ (Max.)
● Low gate charge typical @ 81nC (Typ.)
● Low Crss typical @ 339pF (Typ.) Ordering Information Part No. TSM100N06CZ C0G Package TO-220 Packing 50pcs / Tube Note: “G” denote for Halogen Free Product Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Drain Current-Pulsed Note 1 Avalanche Current, L=0.1mH Avalanche Energy, L=0.1mH Maximum Power Dissipation TC=25°C TC=70°C TA=25°C TA=70°C TC=25°C TC=70°C TA=25°C VDS VGS ID IDM IAS EAS, EAR PD Storage Temperature Range Operating Junction Temperature Range TA=70°C TSTG TJ * Limited by maximum junction temperature Limit 60 ±20 100(3) 80 14 11 400 71 400 167 1
