TSM10P06 - 60V P-Channel MOSFET

Taiwan Semiconductor

General Description

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Key Features

Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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TSM10P06 60v p-channel mosfet by Taiwan Semiconductor - Datasheet Preview

Datasheet Details

Part number	TSM10P06
Manufacturer	Taiwan Semiconductor
File Size	84.05 KB
Description	60V P-Channel MOSFET
Datasheet	TSM10P06 Datasheet

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TSM10P06 60V P-Channel MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) -60 220 @ VGS = -4.5V -2 RDSON (mΩ) 170 @ VGS = -10V ID (A) -5 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. Package Packing P-Channel MOSFET TSM10P06CP ROG TO-252 2.