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TSM10P06CP - 60V P-Channel MOSFET

Download the TSM10P06CP datasheet PDF. This datasheet also covers the TSM10P06 variant, as both devices belong to the same 60v p-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

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No license, express or implied, to any intellectual property rights is granted by this document.

Key Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TSM10P06-TaiwanSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Taiwan Semiconductor

Part Number Description
TSM10P06 60V P-Channel MOSFET
TSM100N06 60V N-Channel Power MOSFET
TSM10N80 800V N-Channel Power MOSFET
TSM10N80CI 800V N-Channel Power MOSFET
TSM10N80CZ 800V N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TSM10P06 60V P-Channel MOSFET TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) -60 220 @ VGS = -4.5V -2 RDSON (mΩ) 170 @ VGS = -10V ID (A) -5 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Load Switch PA Switch Ordering Information Part No. Package Packing P-Channel MOSFET TSM10P06CP ROG TO-252 2.