TSM1N60 Datasheet N-Channel Power Enhancement Mode MOSFET

Manufacturer: Taiwan Semiconductor

Datasheet Details

Part number	TSM1N60
Manufacturer	Taiwan Semiconductor
File Size	205.94 KB
Description	N-Channel Power Enhancement Mode MOSFET
Datasheet	TSM1N60 Datasheet

The TSM1N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time.

In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes.

The new energy efficient design also offers a drain- to-source diode with a fast recovery time.

www.DataSheet4U.com TSM1N60 N-Channel Power Enhancement Mode MOSFET Pin assignment: 1.

Gate 2.

Drain 3.

Robust high voltage termination Avalanche energy specified Diode is characterized for use in bridge circuits Source to Drain diode recovery time comparable to a discrete fast recovery diode. IDSS and VDS(on) specified at elevated temperature Block Diagram Ordering Information Part No. TSM1N60CP TSM1N60CH Packing Tape & Reel Tube Package TO-252 TO-251 Absolute Maximum Rating (Ta = 25 oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Cur.