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TSM1N80 - N-Channel Power MOSFET

Key Features

  • Advanced planar process.
  • 100% avalanche tested.
  • Fast switching.

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TSM1N80 Taiwan Semiconductor N-Channel Power MOSFET 800V, 0.3A, 21.6Ω FEATURES ● Advanced planar process ● 100% avalanche tested ● Fast switching APPLICATION ● Power Supply ● Lighting KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 800 21.6 5 V Ω nC SOT-223 Notes: Moisture sensitivity level: level 3. Per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Single Pulse Avalanche Energy (Note 2) Avalanche Current, Repetitive or Not-Repetitive (Note 1) Total Power Dissipation @ TC = 25°C Operating Junction Temperature Operating Junction and Storage Temperature Range VDS VGS ID IDM EAS IAR PDTOT TJ TJ, TSTG 800 ±30 0.