| Description | TSM1NB60CP Taiwan Semiconductor N-Channel Power MOSFET 600V, 1.2A, 10Ω FEATURES ● Low RDS(ON) 9.4Ω (Typ.) ● Low gate charge typical @ 7.7nC (Typ.) ● Low Crss typical @ 8pF (Typ.) ● RoHS Compliant ● Halogen-free KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 10 Ω Qg 7.7 nC APPLICATIONS ● Power Supply ● Lighting ● Charger TO-252 (DPAK) Note: MSL 3 (Moisture ... |
| Features |
● Low RDS(ON) 9.4Ω (Typ.) ● Low gate charge typical @ 7.7nC (Typ.) ● Low Crss typical @ 8pF (Typ.) ● RoHS Compliant ● Halogen-free KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 10 Ω Qg 7.7 nC APPLICATIONS ● Power Supply ● Lighting ● Charger TO-252 (DPAK) Note: MSL 3 (Moisture Sensitivity Level) per J-STD-02... |
| Datasheet |
 TSM1NB60CP Datasheet 364.12KB |
