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FEATURES
● Pb-free plating ● RoHS compliant ● Halogen-free
APPLICATIONS
● Lighting ● Charger ● Power Supply ● Switching applications
TSM1NB60LCW
Taiwan Semiconductor
N-Channel Power MOSFET
600V, 0.55A, 15Ω
PRODUCT SUMMARY
PARAMETER
VALUE
VDS
600
RDS(on) (max) VGS = 10V
15
Qg
VGS = 10V
7.5
UNIT V Ω nC
SOT-223
Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL
LIMIT
Drain-Source Voltage
VDS
600
Gate-Source Voltage
VGS
±30
TC = 25°C
0.55
Continuous Drain Current
TC = 100°C
ID
0.35
TA = 25°C
0.23
Pulsed Drain Current (Note 1)
IDM
2.2
Total Power Dissipation
TC = 25°C
PD
10.