TSM210N06 Datasheet N-Channel Power MOSFET

Manufacturer: Taiwan Semiconductor

Datasheet Details

TO-220 Pin Definition: 1.

Gate 2.

Drain 3.

Advanced Trench Technology.
Low RDS(ON) 3.1mΩ (Max. ).
Low gate charge typical @ 160nC (Typ. ).
Low Crss typical @ 300pF (Typ. ) Ordering Information Part No. TSM210N06CZ C0 Package TO-220 Packing 50pcs / Tube Block Diagram N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current TC=70°C TA=25°C ID TA=70°C Drain Current-Pulsed Note 1 IDM Ava.