TSM210N06 Description
Source TSM210N06 60V N-Channel Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 60 3.1 @ VGS =10V ID (A) 210.
TSM210N06 Key Features
- Advanced Trench Technology
- Low RDS(ON) 3.1mΩ (Max.)
- Low gate charge typical @ 160nC (Typ.)
- Low Crss typical @ 300pF (Typ.)