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TSM2301A - 20V P-Channel MOSFET

General Description

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Key Features

  • Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram.

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TSM2301A 20V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 130 @ VGS =-4.5V -20 190 @ VGS =-2.5V ID (A) -2.8 -2.0 Features ● ● Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● ● Battery Management High Speed Switch Ordering Information Part No. TSM2301ACX RFG Package SOT-23 Packing 3Kpcs / 7” Reel P-Channel MOSFET Note: “G” denotes Halogen Free Product.