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  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM2N7002KD Datasheet

60V N-Channel MOSFET

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TSM2N7002KD
60V N-Channel MOSFET
SOT-363
Pin Definition:
1. Source 2 6. Drain 2
2. Gate 2
5. Gate 1
3. Drain 1
4. Source 1
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
60 2 @ VGS = 10V
4 @ VGS = 4.5V
ID (mA)
300
200
Features
Low On-Resistance
ESD Protection
High Speed Switching
Low Voltage Drive
Ordering Information
Part No.
TSM2N7002KDCU6 RF
Package
SOT-363
Packing
3Kpcs / 7” Reel
Block Diagram
Dual N-Channel MOSFET
Absolute Maximum Rating (Ta = 25oC unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Reverse Current
Continuous @ TA=25ºC
Pulsed
Continuous @ TA=25ºC
Pulsed
VDS
VGS
ID
IDM
IDR
IDMR
60 V
±20 V
300
mA
800
300
mA
800
Maximum Power Dissipation
Operating Junction Temperature
Operating Junction and Storage Temperature Range
PD
TJ
TJ, TSTG
300
+150
-55 to +150
mW
oC
oC
Thermal Performance
Parameter
Symbol
Limit
wwwL.DeaadtaSTheemetp4eUr.acotumre (1/8” from case)
TL 5
Junction to Ambient Thermal Resistance (PCB mounted)
RӨJA
625
Notes:
a. Pulse width 300us, Duty cycle 2%
b. When the device is mounted on a glass epoxy board with area measuring 1 x 0.75 x 0.62 inch.
c. The power dissipation of the package may result in a continuous drain current.
Unit
S
oC/W
1/6 Version: B09


  Taiwan Semiconductor (TSMC) Electronic Components Datasheet  

TSM2N7002KD Datasheet

60V N-Channel MOSFET

No Preview Available !

TSM2N7002KD
60V N-Channel MOSFET
Electrical Specifications (Ta = 25oC, unless otherwise noted)
Parameter
Conditions
Symbol
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate Body Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamicb
VGS =0V, ID =250µA
VDS =VGS, ID =250µA
VGS =±20V, VDS =0V
VDS =60V, VGS =0V
VGS =10V, ID =300mA
VGS =4.5V, ID =100mA
VDS =10V, ID =200mA
IS =300mA, VGS =0V
BVDSS
VGS(TH)
IGSS
IDSS
RDS(ON)
gfs
VSD
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switchingc
VDS =10V, ID = 250mA,
VGS =4.5V
VDS = 25V, VGS = 0V,
f = 1.0MHz
Qg
Ciss
Coss
Crss
Turn-On Delay Time
VDD =30V, RG =10Ω
td(on)
Turn-Off Delay Time
ID =200mA, VGEN =10V,
td(off)
Notes:
a. pulse test: PW 300µS, duty cycle 2%
b. For DESIGN AID ONLY, not subject to production testing.
b. Switching time is essentially independent of operating temperature.
Min
60
1.0
--
--
--
--
100
--
--
--
--
--
--
--
Typ
--
1.5
--
--
1.2
2
--
0.8
0.4
30
6
2.5
--
--
Max Unit
-- V
2.5 V
±10 uA
1.0 uA
2Ω
4
-- mS
1.4 V
0.6 nC
--
-- pF
--
25 nS
35
www.DataSheet4U.com
2/6
Version: B09


Part Number TSM2N7002KD
Description 60V N-Channel MOSFET
Maker Taiwan Semiconductor
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