TSM2N7002 Datasheet | Taiwan Semiconductor Company

60V N-Channel Enhancement Mode MOSFET Pin assignment: 1. Gate 2. Source 3. Drain VDS = 60V RDS (on), Vgs @ 10V, Ids @ 500mA = 7.5Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 13.5Ω Features — .. Advanced trench process technology High density cell design for low on-resistance High input impedance High speed switching — — — — No minority carrier storage time CMOS logic patible input No secondary breakdown pact and low profile SOT-23 package — — — Block Diagram Ordering Information Part No. TSM2N7002CX Packing Tape & Reel Package...