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TSM2N7002
60V N-Channel Enhancement Mode MOSFET
Pin assignment: 1. Gate 2. Source 3. Drain
VDS = 60V RDS (on), Vgs @ 10V, Ids @ 500mA = 7.5Ω RDS (on), Vgs @ 5V, Ids @ 50mA = 13.5Ω
Features
www.DataSheet4U.com Advanced trench process technology High density cell design for low on-resistance High input impedance High speed switching No minority carrier storage time CMOS logic compatible input No secondary breakdown Compact and low profile SOT-23 package
Block Diagram
Ordering Information
Part No.
TSM2N7002 Datasheet
